Resonant spin-flip Raman scattering on photoexcited carriers in p-type Cd0.95Mn0.05Te crystals

S. I. Gubarev, T. Ruf, and M. Cardona
Phys. Rev. B 43, 14564 – Published 15 June 1991
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Abstract

The exchange interaction with magnetic impurities has been studied in p-type Cd0.95Mn0.05Te crystals by means of spin-flip Raman scattering (SFRS). An additional line, active in crossed polarizations, was observed in the Raman spectra under excitation above the energy gap. The spectral shift of the line depends strongly on magnetic field and changes from Δν=28 cm1 to Δν=135 cm1 as the field increases from H=1 T to H=10 T. This SFRS line displays resonant behavior with excitation energies close to the exciton transitions. Analysis of the selection rules and resonance energies for different configurations of scattering enables us to attribute this line to SFRS by photoexcited electrons created in the crystal by band-to-band optical excitation. This conclusion is confirmed by the superlinear behavior of the SFRS intensity as a function of the excitation power. These results provide prospects for the study of the s-d exchange interaction in p-type semimagnetic semiconductors using the SFRS method.

  • Received 14 December 1990

DOI:https://doi.org/10.1103/PhysRevB.43.14564

©1991 American Physical Society

Authors & Affiliations

S. I. Gubarev, T. Ruf, and M. Cardona

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Federal Republic of Germany

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Vol. 43, Iss. 18 — 15 June 1991

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