Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band

D. C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, C. E. Stutz, and K. R. Evans
Phys. Rev. B 42, 3578 – Published 15 August 1990
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Abstract

Molecular-beam-epitaxial GaAs grown at very low temperatures (∼200 °C) exhibits anomalous Hall-effect properties. Here we show conclusively that the room-temperature conduction is due to activated (nearest-neighbor) hopping in a deep defect band of concentration 3×1019 cm3, and energy Ec-0.75 eV, along with conduction due to free carriers thermally excited from this band. At low measurement temperatures, variable-range hopping [σ∝exp(-T0/T)1/4] prevails. The conduction-band mobility can be well explained by neutral-deep-donor scattering in parallel with lattice scattering.

  • Received 26 April 1990

DOI:https://doi.org/10.1103/PhysRevB.42.3578

©1990 American Physical Society

Authors & Affiliations

D. C. Look and D. C. Walters

  • University Research Center, Wright State University, Dayton, Ohio 45435

M. O. Manasreh, J. R. Sizelove, and C. E. Stutz

  • Electronic Technology Laboratory, Wright Research and Development Center/ELRA, Wright-Patterson AFB, Ohio 45433

K. R. Evans

  • Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, Ohio 45432

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Issue

Vol. 42, Iss. 6 — 15 August 1990

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