Multiphonon resonant Raman scattering in high-manganese-concentration Cd1xMnxTe films

W. J. Keeler, H. Huang, and J. J. Dubowski
Phys. Rev. B 42, 11355 – Published 15 December 1990
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Abstract

We have measured resonant Raman scattering and photoluminescence (PL) from Cd1xMnxTe (111) films deposited on (111)-oriented GaAs substrates. Film thickness varied from 0.6 to 1.8 μm and manganese concentrations x varied from 0.44 to 0.70 in the seven samples produced for this study using pulsed laser evaporation and epitaxy. Raman scattering shows that the films are of high quality throughout the composition range. The ‘‘CdTe-like’’ and ‘‘MnTe-like’’ LO-phonon modes appear in combinations up to the eighth order at 13 K under outgoing resonance conditions near the E0 gap PL emission peak. Using Raman LO-phonon energy-composition relations reported in the literature for bulk Cd1xMnxTe, we have estimated the film Mn compositions and found them to be in close agreement with values obtained using energy-dispersive x-ray analysis (EDAX). The PL peak energy was also used to estimate the manganese composition. The best agreement with the Raman and EDAX determinations results when the PL emission is interpreted as being due to a neutral acceptor-bound magnetic polaron instead of an exciton process.

  • Received 28 June 1990

DOI:https://doi.org/10.1103/PhysRevB.42.11355

©1990 American Physical Society

Authors & Affiliations

W. J. Keeler and H. Huang

  • Department of Physics, Lakehead University, Thunder Bay, Ontario, Canada P7B 5E1

J. J. Dubowski

  • Division of Physics, National Research Council of Canada, Ottawa, Canada K1A 0R6

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Vol. 42, Iss. 17 — 15 December 1990

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