Binding energies of biexcitons in AlxGa1xAs/GaAs multiple quantum wells

D. C. Reynolds, K. K. Bajaj, C. E. Stutz, R. L. Jones, W. M. Theis, P. W. Yu, and K. R. Evans
Phys. Rev. B 40, 3340 – Published 15 August 1989
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Abstract

We report observations of transitions associated with biexcitons in AlxGa1xAs/GaAs multiplequantum-well structures of well widths from 200 to 350 Å, using resonant excitation and photoluminescence spectroscopies. The observed biexciton binding energies agree well with those calculated by Kleinman [Phys. Rev. B 28, 871 (1983)]. In contrast, earlier measurements by Miller et al. [Phys. Rev. B 25, 6545 (1982)] gave biexciton binding energies which agreed with Kleinman’s results for well sizes below 150 Å but were significantly greater for larger well sizes. In addition, we report on the biexciton emission-strength dependence on pump power, temperature, and applied-magnetic-field strength.

  • Received 16 January 1989

DOI:https://doi.org/10.1103/PhysRevB.40.3340

©1989 American Physical Society

Authors & Affiliations

D. C. Reynolds, K. K. Bajaj, C. E. Stutz, and R. L. Jones

  • Electronic Technology Laboratory (AFWAL/ELR), U.S. Air Force Wright Aeronautical Laboratories, Wright-Patterson Air Force Base, Ohio 45433

W. M. Theis and P. W. Yu

  • University Research Center, Wright State University, Dayton, Ohio 45435

K. R. Evans

  • Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, Ohio 45324

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Vol. 40, Iss. 5 — 15 August 1989

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