The size, shape, and number density of microvoids in device-quality glow discharge deposited hydrogenated a-Si has been obtained by small-angle x-ray scattering (SAXS). By combining the SAXS results with infrared measurements, we deduce that the interior surfaces of these microvoids are largely unhydrogenated, containing at most 4–9 bonded H atoms. We suggest that these H atoms are the clustered H atoms previously detected by multiple-quantum NMR.

• Received 31 July 1989

DOI:https://doi.org/10.1103/PhysRevB.40.12024