SubbandLandau-level coupling in GaAs/Ga1xAlxAs heterojunctions

A. D. Wieck, F. Thiele, U. Merkt, K. Ploog, G. Weimann, and W. Schlapp
Phys. Rev. B 39, 3785 – Published 15 February 1989
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Abstract

We study the coupling of Landau levels and electric subbands in quasi-two-dimensional electron inversion layers of modulation-doped GaAs/Ga1xAlxAs heterojunctions in tilted magnetic fields. We employ far-infrared Fourier-transform spectroscopy with light polarized parallel to the layers. When the subband separation E10 is much larger than the cyclotron energy ħωc, we find an enhancement of the cyclotron mass due to the parallel magnetic-field component. When the subband separation E10=rħωc is a multiple r=1,2 of the cyclotron energy, we observe a resonant splitting of the cyclotron resonance. The mass enhancement as well as the magnitudes and energetic positions of the splittings are described by perturbation theory and by the triangular-well approximation of the space-charge potential. From the experimental data we determine intersubband energies and dipole matrix elements. Both depend on electron density, which we adjust by illumination with a light-emitting diode or by a gate voltage applied between the inversion layer and a front gate.

  • Received 20 September 1988

DOI:https://doi.org/10.1103/PhysRevB.39.3785

©1989 American Physical Society

Authors & Affiliations

A. D. Wieck, F. Thiele, and U. Merkt

  • Institut für Angewandte Physik, Universität Hamburg, Jungiusstrasse 11, D-2000 Hamburg 36, West Germany

K. Ploog

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, Postfach 80 06 65, D-7000 Stuttgart 80, West Germany

G. Weimann and W. Schlapp

  • Forschungsinstitut der Deutschen Bundespost, Postfach 5000, D-6100 Darmstadt, West Germany

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Vol. 39, Iss. 6 — 15 February 1989

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