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Extended interstitials in silicon and germanium

H. R. Schober
Phys. Rev. B 39, 13013(R) – Published 15 June 1989
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Abstract

Using different classical interaction models for Si and Ge, we study self-interstitial structures. Besides the usually studied well-localized configurations we find new configurations in the densely packed planes. For the Stillinger-Weber model these are the energetically most favored ones. Some of these configurations exhibit quasilocalized vibrations with low frequencies. We expect these or similar defect structures to play an important role in amorphization by irradiation.

  • Received 24 March 1989

DOI:https://doi.org/10.1103/PhysRevB.39.13013

©1989 American Physical Society

Authors & Affiliations

H. R. Schober

  • Institut für Festkörperforschung der Kernforschungsanlage Jülich, D-5170 Jülich, West Germany

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Vol. 39, Iss. 17 — 15 June 1989

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