Electron-hole scattering and the negative absolute mobility of electrons in a semiconductor quantum well

W. Cai, T. F. Zheng, and M. Lax
Phys. Rev. B 37, 8205 – Published 15 May 1988
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Abstract

We study the transport of a quasi-two-dimensional electron-hole gas in a semiconductor quantum well. The screening in the presence of the electron-hole interaction is carefully considered. The method of nonequilibrium phonon wave packet, developed by us, is generalized to include the simultaneous presence of two-dimensional electrons and holes. The occurrence of negative absolute mobility for electrons is discussed. The mobility of minority electrons and majority holes are calculated by use of a drifted temperature model for both types of carriers. The mobilities of minority electrons (from negative to positive) as functions of lattice temperature and electric field are shown. Comparison is made with experiment.

  • Received 18 December 1987

DOI:https://doi.org/10.1103/PhysRevB.37.8205

©1988 American Physical Society

Authors & Affiliations

W. Cai and T. F. Zheng

  • Department of Physics, The City College of the City University of New York, New York, New York 10031

M. Lax

  • Department of Physics and the Graduate Center of the City University of New York, New York, New York 10031 and AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 37, Iss. 14 — 15 May 1988

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