Effective-mass-mismatch-induced intersubband absorption line broadening in semiconductor quantum wells

Z. Ikonic, V. Milanovic, D. Tjapkin, and S. Pajevic
Phys. Rev. B 37, 3097 – Published 15 February 1988
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Abstract

We present a treatment of intersubband optical absorption in quantum-well structures that takes into account the difference of effective masses in well and bulk materials. We show that this difference itself induces a significant absorption line broadening that may exceed the collision line broadening, depending on the structure parameters. The absorption line profiles and widths versus structure parameters (well thickness and doping level) and temperature dependences are given and discussed.

  • Received 27 July 1987

DOI:https://doi.org/10.1103/PhysRevB.37.3097

©1988 American Physical Society

Authors & Affiliations

Z. Ikonic

  • Faculty of Electrical Engineering, Bulevar Revolucije 73, Belgrade, Yugoslavia

V. Milanovic

  • High Technical Post Telegraph and Telephone School, Zdravka elara 16, Belgrade, Yugoslavia

D. Tjapkin and S. Pajevic

  • Faculty of Electrical Engineering, Bulevar Revolucije 73, Belgrade, Yugoslavia

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Vol. 37, Iss. 6 — 15 February 1988

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