The observation of the $s-d$ exchange interaction enhanced spin-flip Raman shift from electrons in ${\mathrm{Cd}}_{1-x}{\mathrm{Mn}}_x\mathrm{Te}:\mathrm{In}$ epilayers and modulation-doped ${\mathrm{Cd}}_{1-x}{\mathrm{Mn}}_x\mathrm{Te}:\mathrm{In}/\mathrm{CdTe}$ superlattices is studied to demonstrate successful controlled doping during the growth by photoassisted molecular-beam epitaxy. We address the following issues with regard to the reported experiments: resonance Raman enhancement, confinement of electrons to the CdTe wells in the superlattices, the penetration of the electronic wave functions into the ${\mathrm{Cd}}_{1-x}{\mathrm{Mn}}_x\mathrm{Te}$ barriers, the spatial location of the intentionally introduced donors, and the strength of the $s-d$ interactions.

• Received 14 July 1987

DOI:https://doi.org/10.1103/PhysRevB.36.9358