• Rapid Communication

Far-infrared magnetoabsorption study of weakly bound electrons in GaAs/AlxGa1xAs multiple quantum wells

E. Glaser, B. V. Shanabrook, R. L. Hawkins, W. Beard, J. -M. Mercy, B. D. McCombe, and D. Musser
Phys. Rev. B 36, 8185(R) – Published 15 November 1987
PDFExport Citation

Abstract

Far-infrared magnetoabsorption experiments have been performed at 4.2 K on GaAs/AlxGa1xAs multiple-quantum-well (MQW) heterostructures that were selectively doped with Si donors in the centers of the quantum wells and barrier layers. Data were obtained for several values of dopant concentration in the barriers. The results provide strong evidence for the binding of electrons in the wells to positively charged ions in the barriers.

  • Received 24 August 1987

DOI:https://doi.org/10.1103/PhysRevB.36.8185

©1987 American Physical Society

Authors & Affiliations

E. Glaser, B. V. Shanabrook, R. L. Hawkins*, and W. Beard

  • Naval Research Laboratory, Washington, D.C. 20375-5000

J. -M. Mercy and B. D. McCombe

  • Department of Physics and Astronomy, State University of New York at Buffalo, Buffalo, New York 14260

D. Musser

  • Martin-Marietta Laboratories, Martin-Marietta Corporation, 1450 South Rolling Road, Baltimore, Maryland 21227

  • *Present address: Air Force Geophysics Laboratory (AFGL/OPI), Hanscom AFB, MA 01731.
  • Present address: Laboratory for Physical Sciences, Department of Physics and Astronomy, University of Maryland, 4938 College Avenue, College Park, MD 20740.

References (Subscription Required)

Click to Expand
Issue

Vol. 36, Iss. 15 — 15 November 1987

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×