Abstract
Far-infrared magnetoabsorption experiments have been performed at 4.2 K on multiple-quantum-well (MQW) heterostructures that were selectively doped with Si donors in the centers of the quantum wells and barrier layers. Data were obtained for several values of dopant concentration in the barriers. The results provide strong evidence for the binding of electrons in the wells to positively charged ions in the barriers.
- Received 24 August 1987
DOI:https://doi.org/10.1103/PhysRevB.36.8185
©1987 American Physical Society