Generation of amorphous-silicon structures with use of molecular-dynamics simulations

R. Biswas, Gary S. Grest, and C. M. Soukoulis
Phys. Rev. B 36, 7437 – Published 15 November 1987
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Abstract

Amorphous-silicon states have been generated in a computationally efficient manner by quenching liquid silicon configurations using a molecular-dynamics simulation. Classical two- and three-body interatomic Si potentials have been used. We present results for the radial distribution functions, bond-angle distributions, vibrational densities of states, and neutron scattering functions for the theoretically generated a-Si states. The molecular-dynamics simulations generate threefold- and fivefold-coordinated defects in the a-Si structures.

  • Received 19 June 1987

DOI:https://doi.org/10.1103/PhysRevB.36.7437

©1987 American Physical Society

Authors & Affiliations

R. Biswas

  • Microelectronics Research Center, Iowa State University, Ames, Iowa 50011

Gary S. Grest

  • Corporate Research Science Laboratory, Exxon Research and Engineering Company, Annandale, New Jersey 08801

C. M. Soukoulis

  • Microelectronics Research Center, Iowa State University, Ames, Iowa 50011

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Vol. 36, Iss. 14 — 15 November 1987

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