Photoreflectance modulation mechanisms in GaAs-<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mrow><mi mathvariant="normal">x</mi></mrow></msub></mrow></math></span><span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi mathvariant="normal">−</mi><mi mathvariant="normal">x</mi></mrow></msub></mrow></math></span>As multiple quantum wells

B. V. Shanabrook; O. J. Glembocki; W. T. Beard

doi:10.1103/PhysRevB.35.2540

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Photoreflectance modulation mechanisms in GaAs- ${Al}_{x}$ ${Ga}_{1 - x}$ As multiple quantum wells

B. V. Shanabrook, O. J. Glembocki, and W. T. Beard

Phys. Rev. B 35, 2540(R) – Published 15 February 1987

Abstract

Photoreflectance (PR) measurements performed in conjunction with photoluminescence excitation spectroscopy have allowed the modulation mechanisms that are responsible for the PR effect in GaAs- ${Al}_{x}$ ${Ga}_{1 - x}$ As multiple quantum wells to be determined. This study indicates that the modulation of the interband excitonic transitions, rather than the band-to-band transitions, is observed in the PR spectrum. The spectral form of the PR line shape is discussed in terms of the optical modulation of the exciton energy gap, exciton lifetime, and integrated oscillator strength.

Received 24 July 1986

DOI:https://doi.org/10.1103/PhysRevB.35.2540

Authors & Affiliations

B. V. Shanabrook, O. J. Glembocki, and W. T. Beard

Naval Research Laboratory, Washington, D.C. 20375

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Vol. 35, Iss. 5 — 15 February 1987

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