Electronic-transport properties of amorphous Cu-Ti films

K. D. D. Rathnayaka, A. B. Kaiser, and H. J. Trodahl
Phys. Rev. B 33, 889 – Published 15 January 1986
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Abstract

We have measured the thermopower and resistivity of vapor-deposited amorphous Cu-Ti films of widely varying composition, at temperatures from 4.2 to 300 K. An explanation of the temperature variation in resistivity, but not in thermopower, requires a mechanism additional to the temperature dependence of the structure factor in the Ziman-Faber model. The magnitude of the resistivity, its temperature variation, and the thermopower are all larger in a Cu47Ti53 film than in corresponding melt-spun metallic glass ribbons, indicating greater disorder scattering, but differences between Cu-rich films and ribbons are more complex.

  • Received 5 August 1985

DOI:https://doi.org/10.1103/PhysRevB.33.889

©1986 American Physical Society

Authors & Affiliations

K. D. D. Rathnayaka, A. B. Kaiser, and H. J. Trodahl

  • Department of Physics, Victoria University of Wellington, Private Bag, Wellington, New Zealand

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Vol. 33, Iss. 2 — 15 January 1986

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