It is pointed out that the approximate subband wave functions used in almost all recent calculations of the phonon-scattering mobility in GaAs heterolayers can lead to significant quantitative errors. A calculation using accurate wave functions and screening gives a best fit to the measured temperature-dependent part of the mobility at low temperatures for a deformation potential of 12 eV.

• Received 15 August 1985

DOI:https://doi.org/10.1103/PhysRevB.33.5904