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Microwave Hall conductivity of the two-dimensional electron gas in GaAs-AlxGa1xAs

F. Kuchar, R. Meisels, G. Weimann, and W. Schlapp
Phys. Rev. B 33, 2965(R) – Published 15 February 1986
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Abstract

For the first time the quantum Hall effect was observed in σxy at microwave frequencies in the two-dimensional electron gas in GaAs-Al0.35Ga0.65As using a crossed waveguide arrangement. These frequencies were 103104 higher than those used in previous experiments where a so-called low-frequency breakdown of the integer quantum Hall effect was observed. Our microwave results show that this effect does not occur in GaAs-AlxGa1xAs heterostructures. Therefore, we have to rule out the mechanism of an effective delocalization at low frequencies and the existence of long semiclassical orbits in the sample.

  • Received 26 July 1985

DOI:https://doi.org/10.1103/PhysRevB.33.2965

©1986 American Physical Society

Authors & Affiliations

F. Kuchar and R. Meisels

  • Institut für Festkörperphysik, Universitat Wien, Vienna, Austria and Ludwig Boltzmann Institut für Festkörperphysik, A-1060 Vienna, Austria

G. Weimann and W. Schlapp

  • Forschungsinstitut der Deutschen Bundespost, D-6100 Darmstadt, Federal Republic of Germany

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Vol. 33, Iss. 4 — 15 February 1986

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