Resonant Raman scattering is used to study the electronic structure of GaSb-AlSb superlattices associated with $E_1$ transitions in GaSb. A new tight-binding approach is developed to analyze the experimental information. The properties of the resonance detected indicate a type-I superlattice at the L point that is consistent with a valence-band offset higher than 0.2 eV. Our results suggest that in our samples the lattice constant of AlSb is compressed to that of GaSb. The behavior of the resonances with temperature has been analyzed and indicates the detection of an interference of the allowed and forbidden mechanisms. We compare our results with previous experimental information.

• Received 18 December 1984

DOI:https://doi.org/10.1103/PhysRevB.32.5303