Phonon-assisted Auger recombination in a quasi-two-dimensional structure semiconductor

Masumi Takeshima
Phys. Rev. B 30, 3302 – Published 15 September 1984
PDFExport Citation

Abstract

A theory is presented of the phonon-assisted Auger recombination of the excess carriers which are confined in a quasi-two-dimensional structure laser. The theory, which is based on the Green's-function formalism, is applied to a quantum well of In0.72Ga0.28As0.6P0.4. It is shown that the Auger recombination is strongly enhanced by phonon assistance. The Auger recombination in the quasi-two-dimensional structure is also compared with that in the three-dimensional structure.

  • Received 10 April 1984

DOI:https://doi.org/10.1103/PhysRevB.30.3302

©1984 American Physical Society

Authors & Affiliations

Masumi Takeshima

  • Semiconductor Laboratory, Matsushita Electronics Corporation, Takatsuki, Osaka 569, Japan

References (Subscription Required)

Click to Expand
Issue

Vol. 30, Iss. 6 — 15 September 1984

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×