Low-temperature ac conductivity of a-GeSe2

J. J. Hauser
Phys. Rev. B 27, 2543 – Published 15 February 1983
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Abstract

The conductivity of a-GeSe2 films deposited at 77 K was measured down to 4.2 K at frequencies ranging between 0.1 and 100 kHz. Similarly to a-As2Te3 and a-As2Te3Ge the ac conductivity below 100 K is proportional to ωsTn with s=1. In contrast with the tellurides, however, the value of n(0.35) is essentially the same for as-deposited films and films annealed at 300 K and decreases to n0.1 when the film is annealed above the glass temperature.

  • Received 13 October 1982

DOI:https://doi.org/10.1103/PhysRevB.27.2543

©1983 American Physical Society

Authors & Affiliations

J. J. Hauser

  • Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 27, Iss. 4 — 15 February 1983

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