Abstract
A reduced version of the independent-electron theory of Auger line shapes is given that takes advantage of the general smallness of those components of a solid's local density of states (LDOS) matrix which are off-diagonal in angular momentum. Thus we present approximate formulae which relate the valence-band Auger line shapes of a soslid simply to its angular-momentum projected LDOS near a surface. Using these simplified formulae, we have located and corrected a number of numerical errors in our previous calculations of the Auger line shapes of Si. We present corrected results here, showing that the independent-electron theory, coupled with the use of atomic Auger matrix elements for Si, actually predicts too large a probability of decay relative to that for decay to give good agreement with measured Si Auger line shapes. Possible reasons for the experimental smallness of the Auger decay rate are discussed. The Si Coster-Kronig line is also recalculated and shown to be in correspondence with the simplified theory of Auger transitions.
- Received 9 August 1977
DOI:https://doi.org/10.1103/PhysRevB.17.690
©1978 American Physical Society