Band structure of cadmium arsenide at room temperature

M. J. Aubin, L. G. Caron, and J. P. Jay-Gerin
Phys. Rev. B 15, 3872 – Published 15 April 1977
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Abstract

Electron effective-mass values obtained from room-temperature magneto-Seebeck and Hall measurements on Cd3As2 have been gathered from the literature. Using Kane's model for an αSn-type inverted electronic energy band structure, the dispersion related for the conduction band has been obtained along with a Γ8Γ6 energy gap of 0.19 eV. Combining these results with the available room-temperature optical data, the relative positions of other bands have been obtained. The heavy-hole valence band, whose maximum is displaced from Γ by ∼ 10% of the distance to the Brillouin-zone edge, has a possible small overlap with the conduction band. These two Γ8 bands are split at Γ by a residual gap of ∼ 0.04 eV. There is a second conduction band whose minimum at Γ is ∼ 0.6 eV above the Γ8 valence band and perhaps a third one ∼ 0.4 eV above the latter.

  • Received 5 October 1976

DOI:https://doi.org/10.1103/PhysRevB.15.3872

©1977 American Physical Society

Authors & Affiliations

M. J. Aubin, L. G. Caron, and J. P. Jay-Gerin*

  • Groupe de Recherche sur les Semiconducteurs et les Diélectriques et Départment de Physique, Université de Sherbrooke, Sherbrooke, Québec, Canada, J1K 2R1

  • *On leave of absence from Centre de Recherches sur les Très Basses Températures, C.N.R.S., and Service Basses Températures, Centre d'Etudes Nucléaires, Grenoble, France.

Comments & Replies

Temperature dependence of electron concentration in cadmium arsenide

F. A. P. Blom and M. J. Gelten
Phys. Rev. B 19, 2411 (1979)

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Vol. 15, Iss. 8 — 15 April 1977

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