Pseudopotential calculation of the surface band structure of (111) diamond and zinc-blende faces: Ge, αSn, GaAs, and ZnS

E. Louis and M. Elices
Phys. Rev. B 12, 618 – Published 15 July 1975
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Abstract

By using a pseudopotential model previously applied to the (111) surface of silicon, the surface band structure of ideal unrelaxed (111) diamond surfaces, and of (111) cationlike and (1¯1¯1¯) anionlike zinc-blende surfaces are studied. Results are given for Ge, αSn, GaAs, and ZnS. A single band of surface states is found for diamond and anionlike zinc-blende surfaces. For cationlike surfaces some more bands appear, one of them being similar in shape to the anionlike band, but much wider.

  • Received 3 December 1974

DOI:https://doi.org/10.1103/PhysRevB.12.618

©1975 American Physical Society

Authors & Affiliations

E. Louis*

  • Centro Coordinado de Física, Universidad Autónoma, Canto Blanco, Madrid, Spain

M. Elices

  • Laboratorio Central de Ensayo de Materiales, Centro de Estudios y Experimentación de Obras Públicas, Alfonso XII 3, Madrid 7, Spain

  • *Supported in part by the Fundación Juan March through a research grant.

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Vol. 12, Iss. 2 — 15 July 1975

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