Magnetic and transport properties in the magnetic topological insulators $\mathrm{MnB}{\mathrm{i}}_{2}\mathrm{T}{\mathrm{e}}_{4}{(\mathrm{B}{\mathrm{i}}_{2}\mathrm{T}{\mathrm{e}}_{3})}_{n}$ ($n=1,2$)

Magnetic and transport properties in the magnetic topological insulators $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ )

M. Z. Shi, B. Lei, C. S. Zhu, D. H. Ma, J. H. Cui, Z. L. Sun, J. J. Ying, and X. H. Chen

Phys. Rev. B 100, 155144 – Published 28 October 2019

Abstract

The observation of quantized anomalous Hall conductance in the forced ferromagnetic state of $MnB i_{2} T e_{4}$ thin flakes has attracted much attention. However, a strong magnetic field is needed to fully polarize the magnetic moments due to the large antiferromagnetic interlayer exchange coupling. Here, we reported the magnetic and electrical transport properties of the magnetic van der Waals $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ) single crystals, in which the interlayer antiferromagnetic exchange coupling is greatly suppressed with the increase of the separation layers $B i_{2} T e_{3}$ . $MnB i_{4} T e_{7}$ and $MnB i_{6} T e_{10}$ show weak antiferromagnetic transition at 12.3 and 10.5 K, respectively. The ferromagnetic hysteresis was observed at low temperature for both of the crystals, which is quite crucial for realizing the quantum anomalous Hall effect without external magnetic field. Our work indicates that $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ) provides an ideal platform to investigate the rich topological phases with their two-dimensional limits.

Received 26 July 2019

DOI:https://doi.org/10.1103/PhysRevB.100.155144

Physics Subject Headings (PhySH)

Metamagnetism Quantum anomalous Hall effect

Topological materials

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Z. Shi¹, B. Lei¹, C. S. Zhu¹, D. H. Ma¹, J. H. Cui¹, Z. L. Sun¹, J. J. Ying ^1,2,*, and X. H. Chen ^1,2,3,†

¹Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics and Key Laboratory of Strongly-coupled Quantum Matter Physics, Chinese Academy of Sciences (CAS), University of Science and Technology of China, Hefei, Anhui 230026, China
²CAS Center for Excellence in Quantum Information and Quantum Physics, Hefei, Anhui 230026, China
³Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

^*yingjj@ustc.edu.cn
^†chenxh@ustc.edu.cn

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Vol. 100, Iss. 15 — 15 October 2019

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Figure 1
(a),(b) X-ray-diffraction patterns with strong preferred orientation along [001] for $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ). (c),(d) Atomic structural models of $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ). The purple blocks represent edge-sharing nonmagnetic $BiT e_{6}$ octahedra, and the red blocks indicate edge-sharing magnetic $MnT e_{6}$ octahedra. (e),(f) Temperature dependence of zero-field-cooled (ZFC) and field-cooled (FC) magnetic susceptibility for $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ). The red and blue curves represent magnetic susceptibility with $H ∥ c$ and $H ∥ a b$ , respectively. The dashed lines indicate the antiferromagnetic transition temperature. The insets represent the temperature dependence of $1 / (χ - χ_{0})$ for FC curves. (g) In-plane electrical resistivity of $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ) single crystals measured from room temperature down to 2 K. The red and blue arrows indicate the magnetic transition temperatures for $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ).
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Figure 2
Magnetic properties of $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ) single crystals. (a),(b) Isothermal magnetization for $MnB i_{4} T e_{7}$ with $H ∥ c$ and $H ∥ a b$ measured at various temperatures. (d),(e) Isothermal magnetization for $MnB i_{6} T e_{10}$ with $H ∥ c$ and $H ∥ a b$ at various temperatures. (c),(f) Enlarged area of M-H curves at low field for $MnB i_{4} T e_{7}$ and $MnB i_{6} T e_{10}$ with $H ∥ c$ . The M-H curves are shifted vertically with step of $8 μ_{B} / f . u .$ for clarity. The sudden increase of M indicates the spin-flip transition. Ferromagnetic hysteresis can be observed at low temperatures with $H ∥ c$ . The red and blue arrows represent the spin orientations of the $MnB i_{2} T e_{4}$ SLs.
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Figure 3
Isothermal magnetoresistance of $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ) single crystals at different temperatures. (a),(c) Field dependence of in-plane resistivity $ρ_{x x} (H)$ with magnetic field applied parallel to the $c$ axis for $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ). The $ρ_{x x} (H)$ for $MnB i_{6} T e_{10}$ at 2 K is shifted down by 5 µΩ cm for clarity. (b),(d) Field dependence of in-plane resistivity $ρ_{x x} (H)$ with magnetic field applied in the $a b$ plane for $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ) at various temperatures, respectively. The anomalies in the $ρ_{x x} (H)$ for $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ with $H ∥ c$ indicate the spin-flip transitions and the low-temperature butterfly shape indicates the ferromagnetic hysteresis.
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Figure 4
(a) Hall resistivity $[ρ_{x y} (H)]$ as a function of magnetic field at various temperatures for $MnB i_{4} T e_{7}$ with magnetic field applied along the $c$ -axis direction. (b) Enlarged regime of $ρ_{x y} (H)$ in the low magnetic field range from −0.3 to 0.3 T clearly shows the anomalous Hall effect for $MnB i_{4} T e_{7}$ . (c) Anomalous Hall resistivity ( $ρ_{x y}^{A}$ ) as a function of magnetic field at various temperatures for $MnB i_{6} T e_{10}$ . The $ρ_{x y}^{A}$ are shifted vertically with step of 0.8 µΩ cm for clarity. (d) Temperature dependence of carrier density $n_{e}$ for $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ ). Both of the samples show weak temperature dependence of the carrier density.
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Physical Review B

covering condensed matter and materials physics

Magnetic and transport properties in the magnetic topological insulators $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ )

M. Z. Shi, B. Lei, C. S. Zhu, D. H. Ma, J. H. Cui, Z. L. Sun, J. J. Ying, and X. H. Chen

Phys. Rev. B 100, 155144 – Published 28 October 2019

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Magnetic and transport properties in the magnetic topological insulators MnBi2Te4(Bi2Te3)n (n=1,2)

M. Z. Shi, B. Lei, C. S. Zhu, D. H. Ma, J. H. Cui, Z. L. Sun, J. J. Ying, and X. H. Chen

Phys. Rev. B 100, 155144 – Published 28 October 2019

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Magnetic and transport properties in the magnetic topological insulators $MnB i_{2} T e_{4} {(B i_{2} T e_{3})}_{n}$ ( $n = 1, 2$ )