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Twist-angle sensitivity of electron correlations in moiré graphene bilayers

Zachary A. H. Goodwin, Fabiano Corsetti, Arash A. Mostofi, and Johannes Lischner
Phys. Rev. B 100, 121106(R) – Published 13 September 2019
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Abstract

Motivated by the recent observation of correlated insulator states and unconventional superconductivity in twisted bilayer graphene, we study the dependence of electron correlations on the twist angle and reveal the existence of strong correlations over a narrow range of twist angles near the magic angle. Specifically, we determine the on-site and extended Hubbard parameters of the low-energy Wannier states using an atomistic quantum-mechanical approach. The ratio of the on-site Hubbard parameter and the width of the flat bands, which is an indicator of the strength of electron correlations, depends sensitively on the screening by the semiconducting substrate and the metallic gates. Including the effect of long-ranged Coulomb interactions significantly reduces electron correlations and explains the experimentally observed sensitivity of strong-correlation phenomena on twist angles.

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  • Received 6 May 2019

DOI:https://doi.org/10.1103/PhysRevB.100.121106

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Zachary A. H. Goodwin, Fabiano Corsetti, Arash A. Mostofi, and Johannes Lischner

  • Departments of Materials and Physics and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom

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Issue

Vol. 100, Iss. 12 — 15 September 2019

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