Pressure Effect on Defect Migration in Aluminum

B. J. Buescher and R. M. Emrick
Phys. Rev. B 1, 3922 – Published 15 May 1970
PDFExport Citation

Abstract

The effect of hydrostatic pressure up to 9.5 kbar on the annealing rate of the excess resistivity in quenched aluminum was measured in two annealing regions. One was at —65°C following quenches from 580°C and the other at 0°C following quenches from 331°C. Effective activation volumes for motion were determined to be (3.0±0.3)×1024 cm3 and (2.8±0.3)×1024 cm3, respectively. These results were interpreted in terms of vacancy and divacancy motion. The -65°C anneal value represents the motion of divacancies. The 0°C anneal value cannot unambiguously be assigned to a single type of defect. However, assignment of a single-vacancy motional volume close to the 0°C anneal value is consistent with these and diffusion results if it is assumed that there is a divacancy contribution to self-diffusion in aluminum, or that the motional volume is temperature-dependent.

  • Received 4 September 1969

DOI:https://doi.org/10.1103/PhysRevB.1.3922

©1970 American Physical Society

Authors & Affiliations

B. J. Buescher* and R. M. Emrick

  • Department of Physics, University of Arizona, Tucson, Arizona 85721

  • *Present address: Department of Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, N. Y.

References (Subscription Required)

Click to Expand
Issue

Vol. 1, Iss. 10 — 15 May 1970

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×