Abstract
The splittings and shifts of the phonon-aided indirect exciton edge () of AlSb produced by uniaxial stresses along [001], [111], and [110] have been determined. These measurements were performed at 77°K, using the wavelength-modulation technique. TO-phonon-assisted transitions, not reported previously, have been identified in the spectrum of the stressed materials; they yield a TO-phonon energy at of 42±3 meV. These measurements have also yielded the shear deformation potentials of the valence band ( eV and eV) and the conduction band ( eV). The hydrostatic deformation potential of the indirect edge was found to be eV. Electroreflectance measurements at room temperature of the direct edge () of this material under uniaxial compression along the [110] direction have also been performed. The stress-induced splitting of the band observed in these measurements agrees with that obtained from the indirect exciton. The hydrostatic coefficient of the direct edge was found to be -5.9±1.2 eV.
- Received 7 July 1969
DOI:https://doi.org/10.1103/PhysRevB.1.1436
©1970 American Physical Society