Strong Nonvolatile Magnon-Driven Magnetoelectric Coupling in Single-Crystal Co/[PbMg1/3Nb2/3O3]0.71[PbTiO3]0.29 Heterostructures

Cai Zhou, Lvkang Shen, Ming Liu, Cunxu Gao, Chenglong Jia, and Changjun Jiang
Phys. Rev. Applied 9, 014006 – Published 9 January 2018
PDFHTMLExport Citation

Abstract

The ability to manipulate the magnetism on interfacing ferromagnetic and ferroelectric materials via electric fields to achieve an emergent multiferroic response has enormous potential for nanoscale devices with novel functionalities. Herein, a strong electric-field control of the magnetism modulation is reported for a single-crystal Co(14nm)/(001)Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) heterostructure by fabricating an epitaxial Co layer on a PMN-PT substrate. Electric-field-tuned ferromagnetic resonance exhibits a large resonance field shift, with a 120-Oe difference between that under positive and negative remanent polarizations, which demonstrates nonvolatile electric-field control of the magnetism. Further, considering the complexity of the twofold symmetry magnetic anisotropy, the linear change of the fourfold symmetry magnetic anisotropy, relating to the single-crystal cubic magnetocrystal anisotropy of the Co thin film, is resolved and quantified to exert a magnon-driven, strong direct magnetoelectric effect on the Co/PMNPT interface. These results are promising for future multiferroic devices.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 19 July 2017
  • Revised 17 October 2017

DOI:https://doi.org/10.1103/PhysRevApplied.9.014006

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Cai Zhou1,2, Lvkang Shen3, Ming Liu3, Cunxu Gao1,2, Chenglong Jia1,2, and Changjun Jiang1,2,*

  • 1Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou 730000, People’s Republic of China
  • 2Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, Lanzhou 730000, People’s Republic of China
  • 3School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China

  • *Corresponding author. jiangchj@lzu.edu.cn

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 9, Iss. 1 — January 2018

Subject Areas
Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Applied

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×