Kinetic equilibrium properties of relativistic non-neutral electron flow in a cylindrical diode with applied magnetic field

Han S. Uhm and Ronald C. Davidson
Phys. Rev. A 31, 2556 – Published 1 April 1985
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Abstract

The equilibrium properties of a relativistic non-neutral electron layer confined in a magnetically insulated cylindrical diode are investigated within the framework of the steady-state (∂/∂t=0) Vlasov-Maxwell equations. The analysis is carried out for an infinitely long cylindrical electron layer with axis of symmetry parallel to an applied magnetic field B0e→^z, which provides radial confinement of the electrons. The theoretical analysis is specialized to the class of self-consistent Vlasov equilibria fb0(x→,p→) in which all electrons have the same canonical angular momentum (Pθ=P0=const) and the same energy (H=mc2), i.e., fb0=(n^bRc/2πm)δ(H-mc2 )δ(Pθ-P0). One of the most important features of the analysis is that the closed analytic expressions for the self-consistent electrostatic potential φ0(r) and the θ component of vector potential A0(r) are obtained. Moreover, all essential equilibrium quantities, such as electron density profile nb0(r), total magnetic field B0z(r), perpendicular temperature profile Tb0(r), etc., can be calculated self-consistently from these potentials. As a special case, the equilibrium properties of a planar diode are investigated in the limit of large aspect ratio, further simplifying the functional form of the electrostatic and vector potentials. Detailed equilibrium properties are investigated numerically for a cylindrical diode over a broad range of system parameters, including diode voltage V0, cathode electric field, electron density n^b at the cathode, diode polarity, and applied magnetic field B0.

  • Received 22 October 1984

DOI:https://doi.org/10.1103/PhysRevA.31.2556

©1985 American Physical Society

Authors & Affiliations

Han S. Uhm

  • Naval Surface Weapons Center, Silver Spring, Maryland 20910

Ronald C. Davidson

  • Plasma Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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Issue

Vol. 31, Iss. 4 — April 1985

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