Abstract
Natural PbS crystals were exposed to various pressures of sulfur-vapor near 500°C and then quenched. Calculations based on the penetration of junctions gave an interdiffusion constant of 2× /sec at 550°C. The temperature dependence of the Hall coefficient and resistivity for several treated crystals was determined. A forbidden energy gap of 0.37±0.01 ev and an electron to hole mobility ratio of 1.4 was obtained.
- Received 21 June 1954
DOI:https://doi.org/10.1103/PhysRev.96.598
©1954 American Physical Society