High-Field Galvanomagnetic Properties of AuAl2, AuGa2, and AuIn2

J. T. Longo, P. A. Schroeder, and D. J. Sellmyer
Phys. Rev. 182, 658 – Published 15 June 1969
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Abstract

Measurements of the magnetoresistance and Hall voltage have been made in the high-field region on the metallic fluorite compounds AuAl2, AuGa2, and AuIn2. The results have been compared with those expected from the nearly-free-electron (NFE) model. These compounds are uncompensated. The magnetoresistance measurements in principal planes and directions, with one exception, support the NFE model, but the dimensions of the two-dimensional areas of aperiodic open orbits show pronounced deviations. Hall-effect measurements for B in the 100 and 111 directions indicate significant departures of the real Fermi surface from the NFE model. A proposed empirical model gives much better agreement with Hall-effect, magneto-resistance, and de Haas-van Alphen measurements. In the best AuGa2 crystal, magnetoresistance whiskers have been observed and classified in some detail. The magnetoresistance has been calculated for B in the {100} plane, assuming a constant relaxation time and a model of the fourth electron zone with a topography similar to the NFE Fermi surface.

  • Received 29 October 1968

DOI:https://doi.org/10.1103/PhysRev.182.658

©1969 American Physical Society

Authors & Affiliations

J. T. Longo* and P. A. Schroeder

  • Department of Physics, Michigan State University, East Lansing, Michigan 48823

D. J. Sellmyer

  • Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

  • *Present address: Science Center, North American Rockwell Corp., Thousand Oaks, Calif.
  • Supported by the National Science Foundation.
  • Supported by the Advanced Research Projects Agency.

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Vol. 182, Iss. 3 — June 1969

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