Electron Tunneling with Diffuse Boundary Conditions

Robert Stratton
Phys. Rev. 136, A837 – Published 2 November 1964
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Abstract

The tunneling of electrons through potential barriers with plane boundaries involves the conservation of tangential quasimomentum (specular transmission). The boundaries between metals and insulators (e.g., oxides) in thin-film tunneling structures can be very irregular or rough, so that the specular transmission condition must be replaced by a "diffuse" transmission condition which allows nonconservation of tangential momentum. The tunnel current for diffuse boundary conditions and for arbitrary band structures and potential-barrier shapes has been calculated. Compared to the result for specular boundary conditions, the integrand in the expression for the tunnel current contains a factor U(E, pt)=Σρ(pt)π(pt, pt)ρ(pt) for each metal [ρ(pt)=lineardensityofstatesforfixedtangentialmomentum pt, π(pt, pt) is proportional to the probability that the diffuse boundaries change pt to pt, and the sum is over the "shadow" of the energy surface E(p)]. Under reasonable assumptions for π(pt, pt), no appreciable effect of the densities of state on U or on the tunnel current should occur. The effects of diffuse transmission conditions on field emission from manyvalley semiconductors and on tunneling between superconductors are briefly discussed.

  • Received 15 June 1964

DOI:https://doi.org/10.1103/PhysRev.136.A837

©1964 American Physical Society

Authors & Affiliations

Robert Stratton

  • Texas Instruments Incorporated, Dallas, Texas

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Issue

Vol. 136, Iss. 3A — November 1964

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