Summary
|
For Full-Text PDF, please login, if you are a member of IEICE, or go to Pay Per View on menu list, if you are a nonmember of IEICE. |
|
Writing Circuitry for Toggle MRAM to Screen Intermittent Failure Mode Takeshi HONDA Noboru SAKIMURA Tadahiko SUGIBAYASHI Naoki KASAI Hiromitsu HADA Shu-ichi TAHARA Publication IEICE TRANSACTIONS on Electronics Vol.E90-C No.2 pp.531-535 Publication Date: 2007/02/01 Online ISSN: 1745-1353 DOI: 10.1093/ietele/e90-c.2.531 Print ISSN: 0916-8516 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: MRAM, toggle, intermittent failure, Full Text: PDF(885.8KB)>>
Summary: We propose a writing circuit scheme to screen intermittent failure cells for toggle MRAM. The scheme, comprising a current waveform circuitry that controls rise/fall time of writing current, drastically decreases the probability of intermittent failure. To apply the scheme to large-capacity MRAMs, a current booster containing discharging capacitors has also been developed. It adjusts the waveform of writing current to that designed by the current waveform circuitry even in presence of parasitic capacitors and resistors along the writing current path. Such a technique is essential for achieving stability in large-capacity MRAMs. | |||||
|
