IEICE Trans - Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors

Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors

Wojciech KNAP
Jerzy

USAKOWSKI
Frederic TEPPE
Nina DYAKONOVA
Abdelouahad El FATIMY

Publication
IEICE TRANSACTIONS on Electronics Vol.E89-C No.7 pp.926-930
Publication Date: 2006/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.7.926
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category:
Keyword:
plasma oscillations, field effect transistors, detection and emission of THz radiation,

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Summary:
Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection in GaAs HEMTs due to the drain current. Experiments on spectrally resolved THz emission are described that involve room and liquid helium temperature emission from nanometer GaInAs and GaN HEMTs.