Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization

Norio SADACHIKA; Takahiro MURAKAMI; Hideki OKA; Ryou TANABE; Hans Juergen MATTAUSCH; Mitiko MIURA-MATTAUSCH

doi:10.1093/ietele/e91-c.8.1379

Regular Section

Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization

Norio SADACHIKA, Takahiro MURAKAMI, Hideki OKA, Ryou TANABE, Hans Juergen MATTAUSCH, Mitiko MIURA-MATTAUSCH

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Keywords: double gate MOSFET, HiSIM, circuit simulation, volume inversion

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2008 Volume E91.C Issue 8 Pages 1379-1381

DOI https://doi.org/10.1093/ietele/e91-c.8.1379

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Abstract

We have developed a compact double-gate metal-oxide-semiconductor field-effect transistor model for circuit simulation considering the volume inversion effect by solving the Poisson equation explicitly. It is verified that applied voltage dependence of the calculated potential values both at the surface and at the center of the silicon layer reproduce 2 dimensional device simulation results for any device structure, confirming the validity of the model for device optimization.

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