Abstract
In this paper, the distribution of temperature field in the reaction chamber of metal organic chemical vapor deposition (MOCVD) used for growing GaN material was simulated by finite element method. The induction heating conditions that affect the temperature distribution are analyzed, such as current frequency, current intensity, coil turns, coil spacing and the height of the base. And their influence on the temperature distribution of the substrate and their relationship with the substrate temperature are also given. The optimal design parameters of current intensity, current frequency, coil spacing, coil turns and base height are obtained by simulation.
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