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Temperature-dependent photoluminescence characteristics of CH3NH3PbI3-xClx perovskite thin film

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, , Citation F. J. Cheng et al 2017 IOP Conf. Ser.: Mater. Sci. Eng. 215 012030 DOI 10.1088/1757-899X/215/1/012030

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shenghu2729@gmail.com

jacklee@mail.tnu.edu.tw

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1 Department of Electrical Engineering, Tungnan University, Shenkeng, New Taipei City, Taiwan

2 Department of Digital Technology Design, Tungfang Design Institute, Kaohsiung, Taiwan

3 Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan

4 Department of Electronic Engineering, Tungnan University, Shenkeng, New Taipei City, Taiwan

5 Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan

6 Department of Physics, Chung Yuan Christian University, Chungli, Taiwan

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1757-899X/215/1/012030

Abstract

Recently, organometal halide perovskites are widely considered as promising materials in light emitting and lasing devices due to their potential optical properties. The luminescence characteristics of CH3NH3PbI3-xClx perovskite material have investigated by temperature-dependent PL measurements. We suggest that the tetragonal inclusions in the orthorhombic phase of CH3NH3PbI3-xClx thin film at low temperature result in the 12 K PL spectrum with a broad emission band. In addition, the PL peak of CH3NH3PbI3-xClx thin film as a function temperature shows a tendency of buleshift, which is contrary to the typical tendency of redshift for traditional semiconductor materials.

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10.1088/1757-899X/215/1/012030