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Particle detectors based on InP Schottky diodes

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Published 19 October 2012 Published under licence by IOP Publishing Ltd
, , Citation R Yatskiv and J Grym 2012 JINST 7 C10005 DOI 10.1088/1748-0221/7/10/C10005

1748-0221/7/10/C10005

Abstract

A study of electrical properties and detection performance of Indium Phosphide detector structures with Schottky contacts prepared on high purity p-type InP was performed. Schottky barrier detectors were prepared by vacuum evaporation of Pd on p-type epitaxial layers grown on Zn-doped p-type substrates. The detection performance of the detectors was characterized by the measurement of pulse-height spectra with alpha particles emitted from 241Am source at room temperature. The influence of the quality of p-type epitaxial layers on the charge-collection efficiency and energy resolution in the full-width half-maximum is discussed.

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10.1088/1748-0221/7/10/C10005