Performance of silicon photomultipliers at low temperature

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Published 3 March 2020 © 2020 IOP Publishing Ltd and Sissa Medialab
, , 21st International Workshop On Radiation Imaging Detectors Citation S. Nuruyev et al 2020 JINST 15 C03003 DOI 10.1088/1748-0221/15/03/C03003

1748-0221/15/03/C03003

Abstract

The performances of silicon photomultipliers with different structures are investigated at low temperature.The first sample is a micro pixel avalanche photodiode with deep buried pixel structure from Zecotek Photonics Inc. The second and third ones are multi-pixel photo counters with a surface pixel design from Hamamatsu Photonics. The influence of temperature on the main parameters of the photodiodes such as photon detection efficiency (PDE), gain, and capacitance was studied in the temperature range from 0oC to −120oC.

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