Abstract
We used a tightly focused Gaussian beam of a HeNe laser to study accelerated light-induced degradation (Staebler-Wronski effect) and high photocarrier generation rates in amorphous and microcrystalline silicon thin-film solar cells, at up to13 MW/m2 irradiance. For the experiments, the spot radius was varied from a minimum of 8.6 μm in the focus to around 1 mm away from the focus. According to COMSOL® simulations, even at these high power densities heat diffusion into a glass substrate aided by spreading conduction via the Ag back-contact restricts the temperature rise to less than 14 K. Short-circuit current can be measured directly over a range of irradiances, and the J-V characteristic may be estimated by taking into account shunting by the inactive part of the cell.
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