Ordered 1-D and 2-D InAs/InP quantum dot arrays at telecom wavelength

Lateral one-dimensional (1-D) and two-dimensional (2-D) InAs/InP quantum dot (QD) arrangements are created by the concept of self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (100) and (311)B substrates by chemical-beam epitaxy (CBE). The SL templates comprise several-periods of an InAs QD layer plus a thin cap layer, post-growth annealing, and a separation layer. QDs order on top of the templates due to local strain recognition. Distinct preferential In adatom surface migration during annealing and substrate miscut lead to linear QD arrays along [001] for InP (100) substrates and a periodic square lattice aligned ±45° off [-233] for InP (311)B substrates. Optimization of the growth parameters balances In desorption and leads to well-separated and highly uniform QD arrays. Importantly, strong photoluminescence (PL) of defect-free InAs QD arrays is observed with the wavelength tuned into the 1.55-μim telecom region at room temperature through the insertion of GaAs interlayer beneath the QDs. Finally, the concept of self-organized anisotropic strain engineering for QD ordering is extended for formation of more complex architectures by combining it with step-engineering on shallow- and deep-patterned substrates. On the sidewall areas, the steps generated by the artificial patterns play the major role in determination of the In adatom surface migration during annealing, altering the QD arrays direction away from [001] on stripe-patterned InP (100) substrates. On the contrary, the sidewalls on patterned InP (311)B are faceted, not affecting the orientation of the 2-D InAs QD arrays.