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Temperature-dependent photoluminescence of InAs quantum dots Grown on Silicon

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, , Citation Lijuan Yao et al 2021 J. Phys.: Conf. Ser. 1907 012030 DOI 10.1088/1742-6596/1907/1/012030

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fangx@cust.edu.cn

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1 School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, P. R. China

2 School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, P.R. China

3 College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, PR China

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1742-6596/1907/1/012030

Abstract

This paper presents detailed studies on the temperature dependent photoluminescence (PL) of self-assembled InAs/GaAs quantum dots grown on planar on-axis Si (001) substrates. Through the analyze, we have a better understanding of carrier transport processes into InAs/GaAs quantum dots system. Before 160K, the carrier transport from wetting layer to excited states (ES) and ground states (GS) is domination. As the temperature keeps rising, carrier thermal escape from GS to ES is domination.

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10.1088/1742-6596/1907/1/012030