Nitrogen-doped CuAlO₂ Films Prepared by Chemical Solution Deposition

N-doped CuAlO₂ thin films were prepared by chemical solution deposition and annealed at different temperature in nitrogen ambience. Single phase N-doped CuAlO₂ thin films can be obtained by annealing the films at 1000 °C. Crystallization quality of the film was improved by increasing annealing temperature. XPS measurements showed the N has successfully incorporated into the CuAlO₂ thin films. Above results show that the chemical solution deposition was an effective way to prepare the N-doped CuAlO₂ thin films which can be used in optoelectronic devices.