Abstract
In this work, we demonstrate the NIP's all in-house development of a vertical cavity surface emitting laser structure. The VCSEL structure grown via MBE consists of an AlAs/AlGaAs distributed Bragg reflector and an AlGaAs/GaAs quantum well designed to issue at the 850 nm region. Reflectance spectroscopy showed that the stop band is centered around the designed wavelength. The electroluminescence spectra displayed that the maximum light emission corresponded to its design. This is a crucial step in the NIP's development of semiconductor lasers, leading towards future high-speed and highly-tunable VCSEL devices.
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