Microwave electron cyclotron resonance plasma metal organic chemical vapour deposition of Y₂O₃ coatings

Y₂O₃ thin films were deposited on Si (111) and s.s. substrates by microwave electron cyclotron resonance (ECR) plasma metal organic chemical vapour deposition (MOCVD) using a Y(thd)₃ (thd = 2,2,6,6,-tetramethyl-3,5-heptanedionate) precursor at a substrate temperature of 450 C. The deposited coatings were characterized by x-ray photoelectron spectroscopy (XPS). From the observed binding energies of the photoelectrons Y 3d_5/2, Y 3d_3/2 and O 1s, deposition of Y₂O₃ coating on the substrates is confirmed. Along with Y₂O₃ some carbon deposition is also seen. Oxygen plasma annealing of the deposited coatings with increase in the substrate temperature shows reduction in the carbon content in the coating. Details regarding deposition experiments, effects of oxygen plasma annealing and characterization of coatings are discussed in this paper.