Abstract
The origin of anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes was studied. We found that the intensity of the electroluminescence and photoluminescence spectra were both increased in the very beginning period of aging. With the help of a rate-equation model, we concluded that this kind of luminescence efficiency enhancement is a joint effect of the defect reduction in active layers and the changes out of active layers, for example the Mg acceptor annealing.
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