Paper

W-band GaN MMIC PA with 257 mW output power at 86.5 GHz*

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© 2015 Chinese Institute of Electronics
, , Citation Peng Xu et al 2015 J. Semicond. 36 085009 DOI 10.1088/1674-4926/36/8/085009

1674-4926/36/8/085009

Abstract

A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. In order to manage coupling effects between all the parts of the W-band MMIC, all matching and bias networks have been first optimized using circuit simulating software and then systematically simulated on 3D full-wave electromagnetic simulator. The fabricated MMIC PA achieves a 257 mW output power at 86.5 GHz in continuous-wave mode, with an associated power added efficiency of 5.4% and an associated power gain of 6.1 dB. The power density is 459 mW/mm. Moreover, the MMIC PA offers over 100 mW in the 83–90 GHz bandwidth. Those performances were measured at drain bias of 12 V.

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Footnotes

  • Project supported by the National Natural Science Foundation of China (No. 61306113).

10.1088/1674-4926/36/8/085009