SEMICONDUCTOR DEVICES

Modeling and characterization of shielded low loss CPWs on 65 nm node silicon

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2011 Chinese Institute of Electronics
, , Citation Wang Hongrui et al 2011 J. Semicond. 32 064009 DOI 10.1088/1674-4926/32/6/064009

1674-4926/32/6/064009

Abstract

Coplanar waveguides (CPWs) are promising candidates for high quality passive devices in millimeter-wave frequency bands. In this paper, CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology. A physical-based model is proposed to describe the frequency-dependent per-unit-length L, C, R and G parameters. Starting with a basic CPW structure, the slow-wave effect and ground-shield influence have been analyzed and incorporated into the general model. The accuracy of the model is confirmed by experimental results.

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10.1088/1674-4926/32/6/064009