SEMICONDUCTOR PHYSICS

Effect of strontium nitride on the properties of Sr2Si5N8:Eu2+ red phosphor

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2011 Chinese Institute of Electronics
, , Citation Teng Xiaoming et al 2011 J. Semicond. 32 012003 DOI 10.1088/1674-4926/32/1/012003

1674-4926/32/1/012003

Abstract

The nitride phosphor Sr2Si5N8:Eu2+ was synthesized by the high temperature solid-state method. The properties of Sr2Si5N8:Eu2+ were discussed by X-ray diffraction (XRD) scanning electron microscope (SEM) and spectra analysis. The XRD pattern shows that the single phase produces when strontium nitride is a bit excessive. The SEM photo implies that the excessive strontium nitride works as a flux in the reaction system. The position of emission peak is also located at about 612 nm as strontium nitride is excessive. The luminescent intensity of the phosphor adding excessive strontium nitride is higher than that of the phosphor introducing stoichiometric strontium nitride. The optimized content of nitride strontium was 2.05 mol/mol for the obtained phosphor with excellent properties.

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10.1088/1674-4926/32/1/012003