Abstract
The structure of organic thin film transistors (OTFTs) is optimized by introducing a floating gate into the gate dielectric to reduce the threshold voltage of OTFTs. Then the optimized device is simulated, and the simulation results show that the threshold voltage of optimized device is reduced by about 10 V. The reduction of the threshold voltage is helpful and useful for the application of OTFTs in many areas. In addition, this way of reducing the threshold voltage of OTFT is compatible with traditional silicon technology and can be used in manufacturing.