Abstract
Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown by using an organic source, xylene (C8H10), instead of methane (CH4) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was increased gradually by changing the gas ratio of C8H10 to SiH4. The film with high optical band gap was soft and polymer-like and intense photoluminescence were obtained. Room temperature electro-luminescence was also achieved with peak energy at 2.05 eV (600 nm) for the a-SiC:H film with optical band gap of 3.2 eV.
Export citation and abstract BibTeX RIS
Footnotes
- *
Project supported by the National Natural Science Foundation of China (Grant No. 59802004) and by the Natural Science Foundation of Jiangsu Province, China (Grant No. BK99047).